Influence of the preferred orientation and thickness of zirconium nitride films on the diffusion property in copper

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1075-1083

  Chen, Cheng Shi ^a   Liu, Chuan Pu ^a   Yang, Heng Ghieh ^a   Tsao, Chi Y A ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; DIFFUSION; ELECTROMIGRATION; GRAIN BOUNDARIES; LATTICE CONSTANTS; MAGNETRON SPUTTERING; THERMODYNAMIC STABILITY; THIN FILMS; TRANSITION METAL ALLOYS;

CHEMICAL INERTNESS; DIFFUSION BARRIERS; INTERDIFFUSION; LATTICE STRAIN;

ZIRCONIUM COMPOUNDS;

EID: 3242720635     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1738669     Document Type: Article

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