Structure and electronic properties of zirconium and hafnium nitrides and oxynitrides

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Bazhanov, D I ^a   Knizhnik, A A ^a   Safonov, A A ^a   Bagatur'yants, A A ^a   Stoker, M W ^b   Korkin, A A ^c  

^a Kinetic Technologies Ltd   (Russian Federation)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c Nano and Giga Solutions Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ARRANGEMENTS; BAND GAPS; CHEMICAL INERTNESS; HAFNIUM NITRIDES;

BAND STRUCTURE; CRYSTAL ATOMIC STRUCTURE; HAFNIUM COMPOUNDS; LATTICE CONSTANTS; OXIDATION; PROBABILITY DENSITY FUNCTION; THERMAL CONDUCTIVITY;

ZIRCONIUM COMPOUNDS;

EID: 13744260465     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851000     Document Type: Article

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