Thickness-dependent interfacial coulomb scattering in atomically thin field-effect transistors

Nano Letters

Volumn 13, Issue 8, 2013, Pages 3546-3552

  Li, Song Lin ^a   Wakabayashi, Katsunori ^a   Xu, Yong ^a   Nakaharai, Shu ^a   Komatsu, Katsuyoshi ^a   Li, Wen Wu ^a   Lin, Yen Fu ^a   Aparecido Ferreira, Alex ^a   Tsukagoshi, Kazuhito ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

chalcogenide; electrical transport; field effect transistor; scattering mechanism; Two dimensional material

Indexed keywords

CARRIER DISTRIBUTIONS; ELECTRICAL TRANSPORT; HIGH PERFORMANCE DEVICES; PERFORMANCE IMPROVEMENTS; SCATTERING MECHANISMS; SURFACE DANGLING BONDS; TWO-DIMENSIONAL MATERIALS; TWO-DIMENSIONAL SEMICONDUCTORS;

CARRIER MOBILITY; CHALCOGENIDES; ELECTRON SCATTERING; MOLYBDENUM COMPOUNDS; TWO DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 84881596995     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4010783     Document Type: Article

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