Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Nature Communications

Volumn 5, Issue , 2014, Pages

  Zhu, Wenjuan ^a   Low, Tony ^a   Lee, Yi Hsien ^b   Wang, Han ^a   Farmer, Damon B ^a   Kong, Jing ^c   Xia, Fengnian ^d   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PROPERTY; CONDUCTIVITY; ELECTRIC FIELD; ELECTRONIC EQUIPMENT; MOLYBDENUM; VAPOR PRESSURE;

CONDUCTANCE; ELECTRIC FIELD; QUANTITATIVE STUDY; RESPONSE TIME; VAPOR;

EID: 84894608525     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms4087     Document Type: Article

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