Optimized cleaning method for producing device quality InP(100) surfaces

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Sun, Yun ^a   Liu, Zhi ^b   MacHuca, Francisco ^c   Pianetta, Piero ^a   Spicer, William E ^a  

^a SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; PHOTOEMISSION ELECTRON SPECTROSCOPY (PES); RESIDUAL OXIDES; SURFACE PASSIVATION;

CLEANING; CONCENTRATION (PROCESS); ETCHING; HYDROPHOBICITY; PASSIVATION; PHOTOEMISSION; RAPID THERMAL ANNEALING; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS;

SURFACE CHEMISTRY;

EID: 21744460358     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935745     Document Type: Article

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