Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition

Applied Surface Science

Volumn 256, Issue 24, 2010, Pages 7530-7534

  Casey, Patrick ^a   Hughes, Greg ^a  

^a DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

Atomic hydrogen; III V semiconductors; InP; MgO; Si control layers

Indexed keywords

ATOMIC FORCE MICROSCOPY; CLEANING; DEPOSITION; HYDROGEN; III-V SEMICONDUCTORS; MAGNESIA; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC HYDROGEN; ATOMIC HYDROGEN CLEANING; CONTROL LAYERS; INTERFACIAL ANALYSIS; INTERFACIAL CONTROL; SUBSTRATE TEMPERATURE; SURFACE CHARACTERISTICS; SURFACE PREPARATION;

INDIUM PHOSPHIDE;

EID: 77955421684     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.05.101     Document Type: Article

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