Interface of atomic layer deposited Al 2O 3 on H-terminated silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 9, 2006, Pages 2194-2199

  Gao, K Y ^a   Speck, F ^a   Emtsev, K ^a   Seyller, Th ^a   Ley, L ^a   Oswald, M ^b   Hansch, W ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATTENUATED TOTAL REFLECTION (ATR); HYDROGEN-TERMINATED SILICON; SURFACE BONDS;

DIELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; PERMITTIVITY; SILICON; SYNCHROTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION;

EID: 33746354957     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200566014     Document Type: Conference Paper

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