Chemical depth profile of ultrathin nitrided SiO2 films

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1014-1016

  Herrera Gomez A ^a   Hegedus, A ^b   Meissner, P L ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DEPTH PROFILE; DEPTH PROFILE; NITRIDATION PROCESS; NITRIDED; NONUNIFORMITY; OXYNITRIDES; PHYSICAL CONSTRAINS; SI ATOMS; SIMPLE METHOD; ULTRA-THIN; X RAY PHOTOEMISSION SPECTROSCOPY;

ATOMS; NITRIDES; PHOTOELECTRON SPECTROSCOPY; SILICON; STOICHIOMETRY;

SILICON COMPOUNDS;

EID: 79956038791     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494121     Document Type: Article

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19. If the analysis were done without accounting for depth profile effects, the amount of N and O would be subestimated due to their smaller escape depth.