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Applied Physics Letters

Volumn 103, Issue 12, 2013, Pages

In situ study of atomic layer deposition Al2O3 on GaP (100)

(7) Dong, H a Brennan, B a Qin, X a Zhernokletov, D M b Hinkle, C L a Kim, J a Wallace, R M a

a The University of Texas at Dallas (United States)

b UNIVERSITY OF TEXAS AT DALLAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STATE; IN-SITU STUDY; NATIVE OXIDES; PHOSPHORUS OXIDE; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; TRIMETHYLALUMINUM;

DEPOSITION; GALLIUM ALLOYS; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84884867947 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4821779 Document Type: Article

Times cited : (12)

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