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Applied Physics Letters

Volumn 102, Issue 13, 2013, Pages

Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors

(7) Galatage, R V a Dong, H a Zhernokletov, D M b Brennan, B a Hinkle, C L a Wallace, R M a,b Vogel, E M c

a The University of Texas at Dallas (United States)

b UNIVERSITY OF TEXAS AT DALLAS (United States)

c Georgia Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-V MEASUREMENT; CAPACITANCE VOLTAGE MEASUREMENTS; CHEMICAL CHARACTERISTIC; INP; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NATIVE OXIDES; XPS ANALYSIS;

CHEMICAL BONDS; CONDUCTION BANDS; HAFNIUM OXIDES; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 84876145767 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4799660 Document Type: Article

Times cited : (41)

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