Surface and interfacial reaction study of half cycle atomic layer deposited Al 2O 3 on chemically treated InP surfaces

Applied Physics Express

Volumn 4, Issue 12, 2011, Pages

  Brennan, Barry ^a   Dong, Hong ^a   Zhernokletov, Dmitry ^a   Kim, Jiyoung ^a   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CLEAN UP; DEPOSITION PROCESS; FIRST CYCLE; HALF CYCLE; II-IV SEMICONDUCTORS; IN-SITU; INDIUM OXIDE; INP; OXYGEN TRANSFER; TRIMETHYL ALUMINUMS;

ATOMIC SPECTROSCOPY; INDIUM; PHOSPHORUS; SEMICONDUCTING INDIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE REACTIONS;

EID: 83455179457     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.125701     Document Type: Article

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