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Journal of the Electrochemical Society

Volumn 158, Issue 12, 2011, Pages

Thermal stabilities of ALD-HfO2 films on HF- and (NH 4)2S-cleaned InP

(4) An, Chee Hong a Byun, Young Chul a Lee, Myung Soo a Kim, Hyoungsub a

a Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; FREQUENCY DISPERSION; INP; INP SUBSTRATES; INTERFACE DEFECTS; INTERFACIAL LAYER; LOW-FIELD LEAKAGE CURRENTS; SUBSTRATE MATERIAL; THERMAL-ANNEALING;

DEFECT DENSITY; HAFNIUM OXIDES; PASSIVATION; SILICON COMPOUNDS; SUBSTRATES; THERMODYNAMIC STABILITY;

INTERFACES (MATERIALS);

EID: 81355142906 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.010112jes Document Type: Article

Times cited : (22)

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