Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  McDonnell, S ^a   Dong, H ^a   Hawkins, J M ^a   Brennan, B ^a   Milojevic, M ^a   Aguirre Tostado, F S ^a   Zhernokletov, D M ^a   Hinkle, C L ^a   Kim, J ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC CONDITIONS; EX SITU; EXPOSURE TEMPERATURE; II-IV SEMICONDUCTORS; IN-SITU; INTERFACE REACTIONS; INTERFACIAL OXIDES; METAL OXIDE DEPOSITION; MONOCHROMATIC X-RAYS; RE-GROWTH; THIN FILM METAL;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; GALLIUM ARSENIDE; HAFNIUM OXIDES; METALLIC COMPOUNDS; PHOTOELECTRONS; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTOR GROWTH;

EID: 84859802580     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3700863     Document Type: Article

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