Surface passivation and implications on high mobility channel performance (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1544-1549

  Hinkle, C L ^a   Milojevic, M ^a   Vogel, E M ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

ALD; Alternate channel; High mobility; III V MOS; Oxidation states; Passivation; Pinning

Indexed keywords

ALD; ALTERNATE CHANNEL; HIGH MOBILITY; III-V MOS; OXIDATION STATES; PINNING;

GALLIUM; MOS DEVICES; OXIDATION; SURFACE ANALYSIS;

PASSIVATION;

EID: 67349228795     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.030     Document Type: Article

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