Defects Formed in Nonpolar GaN Grown on SiC and Al2O3 and their Reduction in Pendeo-epitaxial and Laterally Overgrown GaN Layers

Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

Volumn , Issue , 2008, Pages 255-286

  Liliental Weber, Zuzanna ^a   Zakharov, Dmitri Nikdaj ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Basal stacking faults; Full dislocations; GaN growth on a plane SiC; GaN growth on r plane Al2O3; Lateral epitaxial overgrowth; Nonpolar GaN; Partial dislocations; Pendeo epitaxial; Prismatic stacking faults

Indexed keywords

EID: 84889422977     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527623150.ch10     Document Type: Chapter

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