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Volumn 63, Issue 11, 1988, Pages 5609-5611

Dislocation density reduction through annihilation in lattice-mismatched semiconductors grown by molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000639342     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.340343     Document Type: Article
Times cited : (70)

References (12)
  • 1
    • 84950589469 scopus 로고
    • See, for example, Mater. Res. Soc. Symp. Proc. (Materials Research Society, Pittsburgh, PA)
    • (1987) Heteroepitaxy on Si II , vol.Vol. 91 , pp. 15
    • Shaw, D.W.1
  • 9
    • 84950791418 scopus 로고    scopus 로고
    • The stacking fault density was affected, but the overall density was much lower than the threading dislocation density. See, for example, Ref. 2.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.