Can laterally overgrown GaN layers be free of structural defects?

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Cherns, D ^a   Liliental Weber, Z ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; EPITAXIAL GROWTH; SAPPHIRE; SHEAR STRESS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BOUNDARY DISLOCATIONS; BURGERS VECTORS; EPITAXIAL LATERAL OVERGROWTH; HALF-LOOP DISLOCATIONS; LARGE ANGLE CONVERGENT BEAM ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035560305     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)