Ten-Milliwatt Operation of an AlGaN-Based Light Emitting Diode Grown on GaN Substrate

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 113-116

  Nishida, T ^a   Kobayashi, N ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1942425128     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<113::AID-PSSA113>3.0.CO;2-C     Document Type: Article

References (7)

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7. T. NISHIDA, T. AKASAKA, and N. KOBAYASHI, Jpn. J. Appl. Phys. 37, 159 (1998).