Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 8 B, 1999, Pages

  Deguchi, Takahiro ^a   Sekiguchi, Kaoru ^a   Nakamura, Atsushi ^a   Sota, Takayuki ^a   Matsuo, Ryuji ^a   Chichibu, Shigefusa ^a   Nakamura, Shuji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC FIELD EFFECTS; ELECTRON ABSORPTION; LATTICE CONSTANTS; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS;

CLADDING LAYER; EMISSION INTENSITY; EXCITONIC ABSORPTION; INTERNAL ELECTRIC FIELDS; PHOTOLUMINESCENCE SPECTRA; QUANTUM CONFINED STARK EFFECT; TRANSMITTANCE SPECTRA;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033175440     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l914     Document Type: Article

References (18)