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Volumn 693, Issue , 2002, Pages 309-314
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Superior structural quality of newly developed GaN pendeo-epitaxial layers
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
ETCHING;
NUCLEATION;
SILICON NITRIDE;
TRANSMISSION ELECTRON MICROSCOPY;
MISORIENTATION;
PENDEO-EPITAXIAL LAYERS;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0036374057
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (8)
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