Growth and characterization of pendeo-epitaxial GaN ( 1 1 over(2, -) 0 ) on 4H-SiC ( 1 1 over(2, -) 0 ) substrates

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 504-512

  Wagner, B P ^a   Reitmeier, Z J ^a   Park, J S ^a   Bachelor, D ^b   Zakharov, D N ^c   Liliental Weber, Z ^c   Davis, R F ^a  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A1. Atomic force microscopy, A1. Crystal morphology; A1. Surfaces; A3. Metalorganic chemical vapor deposition; A3. Pendeo epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); NITRIDES; SILICON CARBIDE; STACKING FAULTS; STATISTICAL MECHANICS;

ATOMIC FORCE MICROSCOPY, A1. CRYSTAL MORPHOLOGY; PENDEO-EPITAXY; SEMICONDUCTING III-V MATERIALS;

GALLIUM NITRIDE;

EID: 33646343010     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.011     Document Type: Article

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