Importance of nonradiative recombination processes in violet/UV InGaN light emitting diodes

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 568-571

  Stephan, T ^a   Kunzer, M ^a   Schlotter, P ^a   Pletschen, W ^a   Obloh, H ^a   Muller S ^a   Kohler K ^a   Wagner, J ^a  

^a FIAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOLITHOGRAPHY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EFFECTS;

INDIUM GALLIUM NITRIDE; LOW PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; NONRADIATIVE RECOMBINATION; TEMPERATURE DEPENDENCE;

LIGHT EMITTING DIODES;

EID: 0036960140     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<568::AID-PSSA568>3.0.CO;2-S     Document Type: Article

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