Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire

Applied Physics Letters

Volumn 73, Issue 21, 1998, Pages 3090-3092

  Golan, Y ^a   Wu, X H ^a   Speck, J S ^a   Vaudo, R P ^b   Phanse, V M ^b  

^a University of California   (United States)

^b Epitronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000216465     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122682     Document Type: Article

References (14)

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10. Note that a different diffraction geometry was used for the samples thicker than 1.0 μm. However, the 1.5 μm-thick sample was measured using both geometries (yielding similar results) to validate the step behavior of the XRD FWHM peak broadening at this thickness.
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