TEM studies of Iaterally overgrown GaN layers grown in polar and non-polar direction

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6121, Issue , 2006, Pages

  Liliental Weber, Z ^a   Zakharov, D ^a   Wagner, B ^b   Davis, R F ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Lateral overgrowth; Pendeo epitaxy; Polar and non polar substrates; Structural quality; Transmission electron microscopy

Indexed keywords

LATERAL OVERGROWTH; PENDEO EPITAXY; POLAR AND NON-POLAR SUBSTRATES; STRUCTURAL QUALITY;

DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; EPITAXIAL GROWTH; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 33646681931     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.659227     Document Type: Conference Paper

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