Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites

Silicon Nanocrystals: Fundamentals, Synthesis and Applications

Volumn , Issue , 2010, Pages 69-104

  Balberg, Isaac ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

Electrical transport mechanism; Memory charge storage; Percolation transition; Resonant tunneling; Silicon nanocrystallites

Indexed keywords

EID: 84888729895     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527629954.ch4     Document Type: Chapter

References (124)

1. Lockwood, D.J. (ed.) (1998) Light Emission in Silicon: From Physics to Devices, Academic Press, New York.
2. Kovalev, D., Heckler, H., Polsski, G., and Koch, F. (1999)Phys.Stat.Sol.(b), 215, 871.
3. Bissi, O., Ossicini, S., and Pavesi, L. (2000) Surf. Sci. Rep., 38, 1.
4. Nassiopoulou,A.G. (2004)Encycl.Nanosci. Nanotechnol., 9, 793.
5. Balberg, I. (2008) J. Nanosci. Nanotechnol., 8, 745.
6. Kolek, A. (1994) J. Phys.: Condens.Matter, 6, 469.
7. Abeles, B., Sheng, P., Coutts, M.D., and Arie, Y. (1975) Adv. Phys., 24, 407.
8. Abeles, B. (1976) Appl. Solid State Sci., 6, 1.
9. Fujii, M., Mamezaki, O., Hayashi, S., and Yamomoto, K. (1998) J. Appl. Phys., 83, 1507.
10. Gaponenko, S.V. (1998) Optical Properties of Semiconductor Nanocrystals,Cambridge University, Cambridge.
11. Grabert, H. and Devoret, M.H. (eds) (1991) Single Electron Tunneling, Plenum, New York.
12. Stafford, C.A. and Das Sarma, S. (1994) Phys. Rev. Lett., 72, 3590.
13. Burr, T.A., Seraphin, A.A.,Werwa, E., and Kolenbraner, K.D. (1997) Phys. Rev. B, 56, 4818.
14. Walters, R.J., Bourianoff, G.I., and Atwater, H.A. (2005) Nat. Mater., 4, 143.
15. Lockwood, D.J. and Pavesi, L. (2004) Silicon Photon. Top. Appl. Phys., 94, 1.
16. Nishiguchi, K. and Oda, S. (2000) J. Appl. Phys., 88, 4186.
17. Tan, T.Y., Kamiya, T., Durrani, Z.A.K., and Ahemed, H. (2003) J. Appl. Phys., 94, 633.
18. Khalafalla, M., Mizuta, H., Oda, S., and Durrani, Z.A.K. (2006) Curr. Appl. Phys., 6, 536.
19. Wan, A., Wang, T.H., Zhu, M., and Lin, C.L. (2002) Appl. Phys. Lett., 81, 538.
20. Kim, K. (1998) Phys. Rev. B, 57, 13072.
21. Shalchian, M., Grisolia, J., BenAssayag, G., Coffin, H., Atarodi, S.M., and Claverie, A. (2005) Sold State Electron., 49, 1198.
22. Stielerl, D., Dalal, V.L., Muthukrishnan, K., Noack, M., and Schares, E. (2006) J. Appl. Phys., 100, 036106.
23. Lubianiker, Y. and Balberg, I. (1997) Phys. Rev. Lett., 78, 2433.
24. Reshotko, M.R., Sa'ar, A., and Balberg, I. (2003) Phys. Stat. Sol. (a), 197, 113.
25. Urbach, B., Axelrod, E., and Sa'ar, A. (2007) Phys. Rev. B, 75, 205303.
26. Stauffer, D. and Aharony, A. (1994) Introduction to Percolation Theory, Taylor and Francis, London.
27. Balberg, I. (2009) Springer Encyclopedia of Complexity Vol. 2, Percolation (ed. M. Sahimi), Springer, Berlin.
28. Shklovskii, B.I. and Efros, A.L. (1984) Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin.
29. Johner, N., Grimaldi, C., Balberg, I., and Ryser, P. (2008) Phys. Rev. B, 77, 174204.
30. Balberg, I. (2008) J. Phys. D., 42, 064003.
31. Wiesendanger, R. (1994) Scanning Probe Microscopy and Spectroscopy, Cambridge University Press, Cambridge.
32. Mottnd, N.F. and Davis, E.A. (1979) Electron Processes in Non-Crystalline Materials, Clarendon, Oxford.
33. Balberg, I., Azulay, D., Toker, D., and Millo, O. (2004) Int. J. Mod. Phys. B, 18, 2091.
34. Kastner, M.A. (1992) Rev. Mod. Phys., 64, 849.
35. Sheng, Ping and Klafter, J. (1983) Phys. Rev. B, 27, 2583.
36. Simanek, E. (1981) Solid State Commun., 40, 1021.
37. Berthelot, M. (1862) Ann. Chim. Phys., 66, 110.
38. Mares, J.J., Kristofik, J., and Smid, V. (1992) Semicond. Sci. Tecnol., 7, 119.
39. Street, R.A. (1976) Adv. Phys., 25, 397.
40. Mares, J.J., Kristofik, J., Pangrac, J., and Haspodkova, A. (1993) Appl. Phys. Lett., 63, 180.
41. Stewart, D.R., Ohlberg, D.A.A., Beck, P.A., Lau, C.N., and Stanley Williams, R. (2005) Appl. Phys. A, 80, 1379.
42. Kapoor, M., Singh, V.A., and Johri, G.K. (2000) Phys. Rev. B, 61, 1941.
43. Houtepen, A.J., Kockmann, D., and Vanmaekelbergh, D. (2008) Nanoletters, 8, 3516.
44. Yakimov, A.I., Stepina, N.P., and Dvurechenskii, A.V. (1994) J. Phys.: Condens. Matter, 6, 2583.
45. Glazman, L.I. and Matveev, K.A. (1988) Sov. Phys. JETP, 67, 1276.
46. Sze, S.M. and Ng, K.K. (2007) Physics of Semiconductor Devices, John Wiley & Sons, Inc., Hoboken, NJ.
47. Ren, S.Y. and Dow, J.D. (1992) Phys. Rev. B, 45, 6492.
48. Hill, N.A. and Whaley, K.B. (1996) J. Electron. Mater., 25, 269.
49. Huang, S., Banerjee, S., Yung, T.T., and Oda, S. (2003) Appl. Phys. Lett., 94, 7261.
50. Mahdouani, M., Bourguiga, R., and Jaziri, S. (2008) Physica E, 42, 228.
51. Banin, U. and Millo, O. (2003) Annu. Rev. Phys. Chem., 54, 465.
52. Chandller, R.E., Houtepen, A.J., Nelson, J., and Vanmeakelbergh, D. (2007) Phys. Rev. B, 75, 085325.
53. Toker, D., Balberg, I., Zelaya-Angel, O., Savir, E., and Millo, O. (2006) Phys. Rev. B, 73, 045317.
54. Raisky, O.Y., Wang, W.B., Alfano, R.R., Reynolds, C.L., Stampone, D.V., and Focht, M.W. (1999) Appl. Phys. Lett., 74, 129.
55. Niquet, Y.M., Delerue, C., Lannoo, M., and Alan, G. (2001) Phys. Rev. B, 64, 113305.
56. Rafiq, M.A., Tsuchiya, Y., Mizuta, H., Oda, S., Uno, S., Durnani, Z.A.K., and Milne, W.I. (2006) J. Appl. Phys., 100, 014303.
57. Balberg, I., Savir, E., Dover, Y., Portillo Moreno, O., Lozada-Morales, R., and Zelaya-Angel, O. (2007) Phys. Rev. B, 75, 153301.
58. Baron, T., Gentile, T., Magnea, N., and Mur, P. (2001) Appl. Phys. Lett., 79, 1175.
59. Salem, M.A., Mizuta, H., Oda, S., Fu, Y., and Willander, M. (2005) Jap. J, Appl. Phys., 44, L88.
60. Salem, M.A., Mizuta, H., and Oda, S. (2004) Appl. Phys. Lett., 85, 3262.
61. Feng, T., Yu, H., Dicken, M., Heath, J.R., and Atwater, H.A. (2005) Appl. Phys. Lett., 86, 033103.
62. Makihara, K., Xu, J., Ikeda, M., Murakami, H.,Higashi, S., and Miyazaki, S. (2006) Thin solid Films, 508, 186.
63. Dongs, E.M., Skowronski, C.S., and Farmer, K.R. (1998) Appl. Phys. Lett., 73, 3712.
64. Tanaka, Y.A., Fujii, M., Hayashi, S., and Yamamoto, K. (1999) J. Appl. Phys., 86, 3199.
65. Rokhinson, L.P., Guo, L.J., Chou, S.Y., and Tsui, D.C. (2000) Appl. Phys. Lett., 76, 1591.
66. Shi,Y., Yuan, X.L., Wu, J., Bu, H.M., Yang, H.G., Han, P., Zheng, Y.D., and Hiramoto, T. (2000) Supperlatt. Microstruct., 28, 387.
67. Shi, J., Wu, L., Huang, X., Liu, J., Ma, Z., Li, W., Li, X., Xu, J., Li, A., and Chen, K. (2002) Solid State Commun., 123, 437.
68. Huang, S., Banerjee, S., Tung, R.T., and Oda, S. (2003) J. Appl. Phys., 94, 7261.
69. Yu, Z., Aceves, M., Carrillo, J., and Flores, F. (2003) Nanotechnology, 14, 959.
70. Puglisi, R.A., Lombardo, S., Ammendola, G., Nicota, G., and Gerardi, C. (2003) Mater. Sci. Eng., 23, 1047.
71. Yu, L.W., Chen, K.J.,Wu, L.C., Dai, M., Li, W., and Huang, X.F. (2005) Phys. Rev. B, 245305.
72. Luna-Lopez, A., Aceves-Mijares, M., Malik, O., and Glaenzer, R. (2005) J. Vac. Sci. Technol. A, 3, 534.
73. Grisolia, J., Shalchian, M., BenAssayage, G., Coffin, H., Bonafos, C., Schamm, S., Atarodi, S.M., and Calverie, A. (2005) Mater. Sci. Eng. B, 124-125, 494.
74. Klein, D.L., Roth, R., Lim, A.K.L., Alvisatos, A.P., and McEuen, P.L. (1997) Nature, 389, 699.
75. Kapaetanakis, E., Normand, P., Tsoukalas, D., Beltsios, K., Stoemenos, J., Zhang, S., and van der Berg, J. (2000) Appl. Phys. Lett., 77, 3450.
76. Nishiguchi, K. and Oda, S. (2000) J. Appl. Phys., 88, 4186.
77. Augke, R., Eberhardt, W., Single, C., Prins, F.E., Wharam, D.A., and Kern, D.P. (2000) Appl. Phys. Lett., 76, 2065.
78. Gunther, A., Khoury, M., Milicic, S., Vasileska, D., Thornton, T., and Goodnick, S.M. (2000) Suprlatt. Microstruct., 27, 373.
79. Fujii, M., Inoue, Y., Hayashi, S., and Yamamoto, K. (1996) Appl. Phys. Latt., 68, 3749.
80. Wang, T., Wei, W., Xu, G., and Zhang, C. (2002) J. Mod. Phys. B, 16, 4289.
81. Banerjee, S. (2002) Physica E, 15, 164.
82. Taguchi, M., Tsutsumi, Y., Bhatt, R.N., and Wagner, S. (1996) J. Non-Cryst. Solids, 198-200, 899.
83. Lombardo, S., Coffa, S., Bongiorno, C., Spinella, C., Castagna, E., Sciuto, A., Gerardi, C., Ferrari, F., Fazio, B., and Privitera, S. (2000) Mater. Sci. Eng. B, 69-70, 295.
84. Concari, S.B. and Buitrago, R.H. (2004) J. Non-Cryst. Solids, 338-340, 331.
85. Busseret, C., Souifi, A., Baron, T., Monfray, S., Buffet, N., Gautier, E., and Semeria, M.N. (2002) Mater. Sci. Eng. C, 19, 237.
86. De la Torre, J., Souifi, A., Lemiti, M., Poncet, A., Busseret, C., Guillot, G., Bremond, G., Gonzalez, O., Garrido, B., and Morante, J.R. (2003) Physica E, 17, 604.
87. Miller, N.C. and Shivn, A.G. (1967) Appl. Phys. Lett., 10, 86.
88. Hanak, J.J. (1970) J. Mater. Sci., 5, 964.
89. Antonova, I.V., Gulyaev, M.B., Yanovitskaya, Z.Sh., Valodin, V.A., Marin, D.V., Efremov, M.D., Goldstein, Y., and Jedrzejewski, J. (2006) Semiconductors, 40, 1198.
90. Posada, Y., Balberg, I., Fonseca, L.F., Resto, O., and Weisz, S.Z. (2001) Mater. Res. Soc. Symp. Proc., 638, F14-44.
91. Balberg, I., Savir, E., Jedrzejewski, J., Nassiopoulou, A.G., and Gardelis, S. (2007) Phys. Rev. B, 75, 225329.
92. Antonova, I.V., Gulyaev, M., Savir, E., Jedrzejewski, J., and Balberg, I. (2008) Phys. Rev. B, 77, 125318.
93. Dovrat, M., Goshen, Y., Popov, I., Jedrzejewski, J., Balberg, I., and Sa'ar, A. (2005) Phys. Stat. Sol. (c), 2, 3440.
94. Sa'ar, A., Dovrat, M., Jedrzejewski, J., and Balberg, I. (2007) Physica E, 38, 122.
95. Levi Aharoni, H., Azulay, D., Millo, O., and Balberg, I. (2008) Appl. Phys. Lett., 92, 112109.
96. Dovrat, M., Oppenheim, Y., Jedrzejewski, J., Balberg, I., and Sa'ar, A. (2004) Phys. Rev. B, 69, 155311.
97. Sa'ar, A., Reichman, Y., Dovrat, M., Kraf, D., Jedrzejewski, J., and Balberg, I. (2005) Nanoletters, 5, 2443.
98. Nicolian, E.N. and Brews, J.R. (1981) MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, Inc., New York.
99. Luna-Lopez, A., Aceves-Mijaes, M., Malik, O., and Glaenzer, R. (2005) J. Vac. Sci. Technol. A, 23, 534.
100. Zambuto, M. (1989) Semiconductor Devices, McGraw-Hill, New York.
101. Azulay, D., Balberg, I., Chu, V., Conde, J.P., and Millo, O. (2005) Phys. Rev. B, 71, 113304.
102. Reshotko, M.R. and Balberg, I. (2001) Appl. Phys. Lett., 78, 763.
103. Balberg, I.(2008)Phys.Stat.Sol.(c),5,3771.
104. Balberg, I. (2005) Proceedings of the first International Workshop on Semiconductor Nanocrystals, Hungarian Academy of Science, Budapest, p. 291.
105. Huang, S., Banerjee, S., Tung, R.T., and Oda, S. (2000) J. Appl. Phys, 93, 578.
106. Han, K., Kim, I., and Shin, H. (2001) IEEE Trans. Electr. Devices, 48, 874.
107. Abeles, B., Pinch, H.L., and Gittleman, J.I. (1975) Phys. Rev. Lett., 35, 247.
108. Feng, D.I., Kohn, T.J.,Wakoh, K.,Hirose, T., and Sumiyama, K. (2001) Appl. Phys. Lett., 78, 1535.
109. Mantese, J.V., Goldburg, W.I., Darling, D.H., Craighead, H.G., Gibson, U.J., Buhrman, R.A., and Webb, W.W. (1981) Solid State Commun., 37, 353.
110. Balberg, I.,Wagner, N., Goldstein, Y., and Weisz, S.Z. (1990) Mater. Res. Soc. Symp. Proc., 195, 233.
111. Fonseca, L.F. and Balberg, I. (1993) Phys. Rev. B, 48, 14915.
112. Gross, B. and de Figueireda, M.T. (1995) J. Phys. D: Appl. Phys., 18, 617.
113. Kamal, A.H.M., Lutzen, J., Sanborn, B.A., Sidorov, M.V., Kozicki, M.N., Smith, D.J., and Ferry, D.K. (1998) Semicond. Sci. Technol., 13, 1328.
114. Ciurea, M.L., Tedorescu, V.S., Iancu, V., and Balberg, I. (2006) Chem. Phys. Lett., 423, 225.
115. Alonso, M.I., Garriga, M., Bernardi, A., Goni, A.F., Lopeandia, A.F., Garcia, G., Rodriguez-Viejo, J., and Labar, J.L. (2008) Phys. Stat. Sol. (a), 205, 888.
116. Balberg, I., Naidis, R., Fonseca, L.,Weisz, S.Z., Conde, J.P., Alpuim, P., and Chu, V. (2001) Phys. Rev. B, 63, 113201.
117. Balberg, I., Dover, Y., Naides, R., Conde, J.P., and Chu, V. (2004) Phys. Rev. B, 69, 035203.
118. Paesler, N.A., Anderson, D.A., Freeman, E.C., Moddel, G., and Paul, W. (1975) Phys. Rev. Lett., 41, 1492.
119. Kamei, T. and Wada, T. (2004) J. Appl. Phys., 96, 2087.
120. Fujii, M., Mimura, A., Hayashi, S., Yamamoto, K., Urakawa, C., and Ohta, H. (2000) Appl. Phys. Lett., 87, 1855.
121. Ossicini, S., Degoli, E., Iori, F.,Magri, R., Canlele, G., Trani, F., and Ninno, D. (2004) Appl. Phys. Lett., 87, 173120.
122. Street, R.A. (1982) Phys. Rev. Lett., 49, 1187.
123. Borini, S., Boarino, L., and Amato, G. (2007) Phys Rev. B, 75, 165205.
124. Grenet, T., Dehaye, J., Sabra, M., and Gay, F. (2007) Eur. Phys. J. B, 56, 183.