Nanocrystalline silicon - From disordered insulator to dirty metal

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 899-902

  Taguchi, Mikio ^b   Tsutsumi, Yasuo ^a,b   Bhatt, Ravin N ^b   Wagner, Sigurd ^b  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; METALS; NANOSTRUCTURED MATERIALS; THERMAL EFFECTS;

DIRTY METAL; DISORDERED INSULATOR;

SEMICONDUCTING SILICON;

EID: 0030563388     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00079-8     Document Type: Article

References (10)

1. S. Usui and M. Kikuchi, J. Non-Cryst. Solids 34 (1979) 1.
2. G. Willeke, W.E. Spear, D.I. Jones and P.G. Le Comber, Philos. Mag. B46 (1982) 177.
3. J. Kolodzey, S. Aljishi, R. Schwarz, D. Slobodin and S. Wagner, J. Vac. Sci. Technol. A4 (1986) 2499.
4. M. Taguchi and S. Wagner, Mater. Res. Soc. Symp. Proc. 358 (1994) 739.
5. B.L. Altshuler and A.G. Aronov, Solid State Commun. 30 (1979) 115.
6. N.F. Mott, Metal-Insulator Transitions, 2nd Ed. (Taylor and Francis, London, 1990) p, 42.
7. R.F. Milligan, T.F. Rosenbaum, R.N. Bhatt and G.A. Thomas, in: Electron-Electron Interactions in Disordered Systems, ed. A.L. Efros and M. Pollak (North-Holland, Amsterdam, 1985) p. 231.
8. N.F. Mott, J. Non-Cryst. Solids 1 (1968) 1.
9. M.A. Paalanen, T.F. Rosenbaum, G.A. Thomas and R.N. Bhatt, Phys. Rev. Lett. 51 (1983) 1896.
10. A.R. Long, in: Hopping Transport in Solids, ed. M. Pollak and B.I. Shklovskii (North-Holland, Amsterdam, 1991) p. 207.