Imaging of Si quantum dots as charge storage nodes

Materials Science and Engineering C

Volumn 23, Issue 6-8, 2003, Pages 1047-1051

  Puglisi, R A ^a   Lombardo, S ^a   Ammendola, G ^b   Nicotra, G ^a   Gerardi, C ^b  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Atomic force microscopy; Chemical vapor deposition; Nonvolatile memory; Quantum dots; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALS; DATA STORAGE EQUIPMENT; NANOSTRUCTURED MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROSTATIC FORCE MICROSCOPES;

SEMICONDUCTOR QUANTUM DOTS;

IMAGING METHOD;

EID: 0345550278     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2003.09.162     Document Type: Article

References (28)

1. Tiwari S. Rana F. Chan K. Hanafi H. Chan W. Buchanan D. IEDM 521 1995
2. Yano K. Ishii T. Sano T. Mine T. Murai F. Hashimoto T. Kobayashi T. Kure T. Seki K. Proc. IEEE 87 1999 633
3. Guo L. Leobandung E. Chou S.Y. Science 275 1997 649
4. Gebel T. Rebohle L. Zhao J. Borchert D. Fröb H. Borany J.V. Skorupa W. Mater. Res. Soc. Symp. Proc. 638 2001 F18.1
5. Gerardi C. Ammendola G. Melanotte M. Lombardo S. Crupi I. Rimini E. ESSDERC 475 2002
6. Lombardo S. Gerardi C. Corso D. Ammendola G. Crupi I. Melanotte M. NVSMW 105 2003
7. Hanafi H.I. Tiwari S. Khan I. IEEE Trans. Electron Devices 43 1996 1553
8. De Blauwe J. Ostraat M. Green M.L. Weber G. Sorsch T. Kerber A. Klemens F. Cirelli R. Ferry E. Grazul J.L. Baumann F. Kim Y. Mansfield W. Bude J. Lee J.T.C. Hillenius S.J. Flagan R.C. Atwater H.A. IEDM 2000
9. Vizoso J. Martin F. Martinez X. Aymerich X. Microelectron. Eng. 48 1999 431
10. Baron T. Martin F. Mur P. Wyon C. Dupuy M. J. Cryst. Growth 209 2000 1004
11. Madhukar S. Smith K. Muralidhar R. O'Meara D. Sadd M. Nguyen B.-Y. White B. Jones B. Mater. Res. Soc. Symp. Proc. F5.2.1 2001 638
12. Nakajima, et al. Jpn. J. Appl. Phys. 35 1996 189
13. Basa et al. J. Vac. Sci. Technol., A16 4 1998 2465
14. Vizoso J.et al. Microelectron. Eng. 48 1999 431
15. Baron T.et al. J. Cryst. Growth 209 2000 1004
16. Thean A. Leburton J.P. J. Appl. Phys. 90 2001 6384
17. De Salvo B. Ghibaudo G. Pananakakis G. Masson P. Baron T. Buffet N. Fernandes A. Guillaumot B. IEEE Trans. Electron Devices 48 2001
18. Terris B.D. Stern J.E. Rugar D. Mamin H.J. Phys. Rev. Lett. 56 1991 2725
19. Schaadt D.M. Yu E.T. Sankar S. Berkowitz A.E. Appl. Phys. Lett. 74 1999 472
20. Jones J.T. Brigger P.M. Marsh O.J. McGill T.C. Appl. Phys. Lett. 75 9 1999 1326
21. Boer E.A. Brongersma M.L. Atwater H.A. Flagan R.C. Bell L.D. Appl. Phys. Lett. 79 6 2001 791
22. Girard P. Ramonda M. Saluel D. J. Vac. Sci. Technol., B20 4 2002 1348
23. Nicotra G. Lombardo S. Spinella C. Ammendola G. Gerardi C. Demuro C. Appl. Surf. Sci. 205 2003 304
24. G. Nicotra, R.A. Puglisi, S. Lombardo, C. Spinella, M. Vulpio, G. Ammendola, M. Bileci, C. Gerardi, J. Appl. Phys. (submitted for publication).
25. Fitch J.T. Lukowsky G. Kobeda E. Irene E.A. J. Vac. Sci. Technol., B7 2 1989 153
26. Mazen F. Baron T. Bremond G. Buffet N. Rochat N. Mur P. Semeria M.N. J. Electrochem. Soc. 150 3 2003 G203
27. Lombardo S. De Salvo B. Gerardi C. Baron T. Proceedings of INFOS Conference 2003
28. Crupi I. Corso D. Ammendola G. Lombardo S. Gerardi C. De Salvo B. Ghibaudo G. Rimini E. Melanotte M. Silicon Nanoeletronics Workshop Proceedings 2003