Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing

Applied Physics Letters

Volumn 77, Issue 21, 2000, Pages 3450-3452

  Kapetanakis, E ^a   Normand, P ^a   Tsoukalas, D ^a   Beltsios, K ^b   Stoemenos, J ^c   Zhang, S ^d   Van Den Berg, J ^d  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000462552     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1328101     Document Type: Article

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