Hopping mechanism of electric transport in intrinsic and p-doped nanocrystalline silicon thin films

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 331-335

  Concari, S B ^a   Buitrago, R H ^a,b  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

^b Instituto de Desarrollo Tecnologico para la Industria Quimica   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BORON COMPOUNDS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; FERMI LEVEL; PERCOLATION (SOLID STATE); SILICON COMPOUNDS; SOLIDS; TEMPERATURE CONTROL; THIN FILMS;

HOPPING MECHANISM; LOCALIZATION; PREFACTOR; TRANSPORT EQUATIONS;

NANOSTRUCTURED MATERIALS;

EID: 2942555193     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.067     Document Type: Conference Paper

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