Characteristics of p-channel Si nano-crystal memory

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 874-879

  Han, Kwangseok ^b   Kim, Ilgweon ^c   Shin, Hyungcheol ^a,b  

^a IEEE

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

Direct tunneling (DT); Hole tunneling; Nano crystal memory; Valence band electron tunneling

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; ELECTRONS; NANOSTRUCTURED MATERIALS;

DIRECT TUNNELING; HOLE TUNNELING; NANOCRYSTAL MEMORY; VALENCE BAND ELECTRON TUNNELING;

DATA STORAGE EQUIPMENT;

EID: 0035339613     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918234     Document Type: Article

References (9)