Electronic properties of silicon nanocrystallites obtained by SiO x (x < 2) annealing

Materials Science and Engineering C

Volumn 19, Issue 1-2, 2002, Pages 237-241

  Busseret, C ^a   Souifi, A ^a   Baron, T ^a,b   Monfray, S ^a   Buffet, N ^b   Gautier, E ^b   Semeria, M N ^b  

^a UNIVERSITÉ DE LYON   (France)

^b CEA LETI   (France)

Author keywords

Charging kinetic; Current modeling; Nanocrystal memory; SiO x

Indexed keywords

NANOCRYSTALS;

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; MOS DEVICES; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SILICON COMPOUNDS;

NANOSTRUCTURED MATERIALS;

ELECTRICAL PROPERTY; NANOCRYSTAL; SILICON;

EID: 0037005855     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00482-9     Document Type: Article

References (14)