Impact of isovalent defect engineering strategies on carbon-related clusters in silicon

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 5, 2013, Pages 1696-1701

  Londos, C A ^a   Sgourou, E N ^a   Chroneos, A ^b,c  

^a UNIVERSITY OF ATHENS   (Greece)

^b OPEN UNIVERSITY   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DEFECTS; ELECTRON IRRADIATION; GERMANIUM METALLOGRAPHY; LEAD METALLOGRAPHY; SILICON COMPOUNDS; THERMODYNAMIC STABILITY; TIN METALLOGRAPHY;

A-CENTER; DEFECT ENGINEERING; DIFFERENT STRUCTURE; ELECTRICALLY ACTIVES; GERMANIUMS (GE); IRRADIATED SILICONS; LOCAL STRAINS; THEORETICAL STUDY;

SILICON;

EID: 84893649201     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-012-0998-9     Document Type: Article

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