Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4693-4697

  Londos, C A ^a   Andrianakis, A ^a   Emtsev, V V ^b   Oganesyan, G A ^b   Ohyama, H ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Electron irradiation; Experiment; Ge doped Si; Group IV and compounds

Indexed keywords

ANNEALING TEMPERATURES; CARBON IMPURITIES; CARBON PRECIPITATION; CZOCHRALSKI SILICON; DOPED MATERIALS; FORM CLUSTERS; GE ATOM; GE CONCENTRATIONS; GE CONTENT; GERMANIUM DOPING; INTERSTITIALS; IR SPECTROSCOPY; MUTUAL ANNIHILATION; OXYGEN-RELATED DEFECTS; THERMAL STABILITY; UNDOPED MATERIAL;

ANNEALING; CONCENTRATION (PROCESS); DEFECTS; DOPING (ADDITIVES); ELECTRON IRRADIATION; EXPERIMENTS; IMPURITIES; OXYGEN; PRECIPITATION (CHEMICAL); SILICON; THERMODYNAMIC STABILITY; WEAR RESISTANCE;

GERMANIUM;

EID: 74349097579     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.145     Document Type: Article

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