Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Journal of the Electrochemical Society

Volumn 148, Issue 12, 2001, Pages

  Claeys, C ^a,d   Simoen, E ^a   Neimash, V B ^b   Kraitchinskii, A ^b   KraS'Ko, M ^b   Puzenko, O ^b   Blondeel, A ^c   Clauws, P ^c  

^a IMEC   (Belgium)

^b INSTITUTE OF PHYSICS   (Ukraine)

^c GHENT UNIVERSITY   (Belgium)

^d Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542652108     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1417558     Document Type: Article

References (39)

1. F. A. Trumbore, Bell Syst. Tech. J., 39, 205 (1960).
2. L. T. Canham, M. R. Dyball, and K. G. Barraelough. Mater. Sci. Eng., B, 4, 95 (1989).
3. A. Brelot, IEEE Trans. Nucl. Sci, 19, 220 (1972).
4. G. D. Watkins, IEEE Trans. Nucl. Sci., NS-16, 13 (1969).
5. G. D. Watkins, Phys. Rev. B, 12, 4383 (1975).
6. G. D. Watkins and J. R. Troxell, Phys. Rev. Lett., 44, 503 (1980).
7. W. Wijaranakula, J. Appl. Phys., 70, 3018 (1991).
8. J. Fuge-Pedersen. A. Nylandsted Larsen, P. Gaiduk, and J. Lundsgaard Hansen, Phys. Rev. Lett., 81, 5856 (1998).
9. A. S. Oates, M. J. Binns, R. C. Newman, J. H. Tucker. J. G. Wilkes, and A. Wilkinson, J. Phys. C: Solid State Phys., 17, 5695 (1984).
10. A. S. Oates and R. C. Newman. Appl. Phys. Lett., 49, 262 (1986).
11. W. Kaiser, P. H. Keck, and C. F. Lange, Phys. Rev., 101, 1264 (1956).
12. M. Stavola, Appl. Phys. Lett., 44, 514 (1984).
13. R. C. Newman, J. H. Tucker, and F. M Livingston. J. Phys. C: Solid State Phys. 16, L151 (1983).
14. K. Hass, J. Phys. Chem Solid. 15, 108 (1960).
15. A. S. Oates, R. C. Newman, J. M. Tucker, G. Davies, and E. C. Lightowlers, Mater. Res. Soc. Symp. Proc. 59, 59 (1986).
16. W. Wijaranakula, J. Appl. Phys., 69, 2737 (1991).
17. W. Wijaranakula, J. Appl. Phys., 72, 2713 (1992).
18. V. B. Neimash, A. Kraitchinskii. M. Kras'ko, O. Puzenko, C. Claeys, E. Simoen, B. Svensson, and A. Kuznetsov. J. Electrochem. Soc., 147, 2727 (2000).
19. L. I. Khirunenko, Yu. V. Pomozov, V. I. Shakhotsov, and V. V. Shumov, Solid State Phenom., 57-58, 183 (1997).
20. W. Kaiser, H. Frisch, and H. Reiss, Phys. Rev., 112, 1546 (1958).
21. G. D. Watkins. Solid State Commun., 17, 1205 (1975).
22. M. Fanciulli and J. R. Byberg, Physica B, 273-274, 524 (1999).
23. J. Nielsen, K. Bonde Nielsen, and A. Nylandsted Larsen, Mater. Sci. Forum. 38-41. 439 (1989).
24. R. Kozlowski, P. Kaminski, and E. Nassarzewska-Orlowska, in Proceedings of the First ENDEASD Workshop, C. Claeys, Editor, p. 186 (1999).
25. E. Simoen, C. Claeys, V. B. Neimash, A. Kraitchinkii, M. Kras'ko, O. Puzenko, A. Blondeel. and P. Clauws, Appl. Phys. Lett., 76, 2838 (2000).
26. E. Simoen, C. Claeys, V. B. Neimash, A. Kraitchinkii, M. Kras'ko, O. Puzenko, A. Blondeel, P. Clauws, G. E. H. Koops. and H. Pattyn, in Proceedings of the second ENDEASD Workshop, C. Claeys, Editor, p. 147 (2000).
27. A. Nylandsted Larsen, J. J. Goubet. P. Mejlholm, J. Sherman Christensen, M. Fanciulli, H. P. Gunnlaugsson, G. Weyer, J. Wulff Petersen, A. Resende, M. Kaukonen, R. Jones, S. Oberg, P. R. Briddon, B. G. Svensson, J. L. Lindstrom, and S. Dannefaer, Phys. Rev. B. 62, 4535 (2000).
28. M. Kaukonen, R. Jones, S. Oberg, and P. R. Briddon, in Proceedings of the second KNDEASD Workshop, C Claeys, Editor, p. 143 (2000).
29. M. Fanciulli and J. R. Byberg, Phys. Rev. B, 61, 2657 (2000).
30. V. B. Neimash, M. G. Sosnin, B. M. Turovskii, V. I. Shakhovtsov, and V. L. Shindich, Sov. Phys. Semicond., 16, 577 (1982).
31. B. G. Svensson, J. Svensson, J. L. Lindström. G. Davies, and J. W. Corbett, Appl. Phys. Lett., 51, 2257 (1987).
32. B. G. Svensson and J. L. Lindström, J. Appl. Phys., 72, 5616 (1992).
33. S. J. Watts, J. Matheson, I. H. Hopkins-Bond, A. Holmes-Siedle, A. Mohammadzadeh, and R. Pace, IEEE Trans. Nucl. Sci. 43, 2587 (1996).
34. M. Moll, H. Feick, E. Fretwurst, G. Lindström and C, Schütze, Nucl. Instrum. Methods Phys. Res. A. 388, 335 (1997).
35. A. R. Peaker, J. H. Evans-Freeman, I. D. Hawkins, P. Y. Y. Kan, J. Terry, L. Rubaldo, M. Ahmed, S. Walts, and L. Dobaczewski, in Proceedings of the First ENDEASD Workshop. C. Claeys, Editor, p. 31 (1999).
36. E. Simoen, C. Claeys, V. Privitera, S. Coffa, M. Kokkoris, E. Kossionides, G. Fanourakis, A. Nylandsted Larsen, and P. Clauws, in Proceedings of the European MRS Symposium on Advanced Semiconductor Devices, Strasbourg, France, June 5-8, 2001.
37. F. Lemeilleur, G. Lindström, and S. Watts, 2nd RD48 Status Report, CERN/LHCC 98-39 (1998).
38. E. Simoen, C. Claeys, A. M. Kraitchinskii, M. M. Kras'ko, V. B. Neimash, and L. I. Shpinar, in Proceedings of GADEST 2001, Catania, Sicily, Sept 30-Oct 4, 2001. In press.
39. E. Simoen, C. Claeys, A. M. Kraitchinskii, M. M. Kras'ko, V. B. Neimash, and L. Shpinar, Solid State Phenom., 82-84, 425 (2002).