The effect of germanium doping on the evolution of defects in silicon

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 133-136

  Londos, C A ^a   Andrianakis, A ^a   Emtsev, V V ^b   Oganesyan, G A ^b   Ohyama, H ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Defect formation; Electron bombardment; Infraread spectroscopy; Silicon

Indexed keywords

ANNEALING; DEFECTS; GERMANIUM; STRAIN; VANADIUM DIOXIDE;

2-MEV ELECTRON; DEFECTS FORMATION; DOPED SILICON; ELECTRON BOMBARDMENTS; GERMANIUM DOPING; IMPURITY ATOMS; INFRAREAD SPECTROSCOPY; INFRARED: SPECTROSCOPY; SILICON SAMPLES; SPECTROSCOPY MEASUREMENTS;

SILICON;

EID: 56949086144     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.043     Document Type: Article

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