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Volumn 113, Issue 11, 2013, Pages

Production and evolution of A-centers in n-type Si1-xGe x

Author keywords

[No Author keywords available]

Indexed keywords

A-CENTER; ANNEALING TEMPERATURES; GE CONTENT; ISOCHRONAL ANNEALS; SIMULTANEOUS GROWTH; TWO BANDS; VACANCY-OXYGEN PAIR;

EID: 84875704951     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795812     Document Type: Article
Times cited : (12)

References (42)
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    • (2007) Phys. Status Solidi B , vol.244 , pp. 3206
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  • 9
    • 0033196065 scopus 로고    scopus 로고
    • 10.1134/1.1187807
    • H. G. Grimeiss, Semiconductors 33, 939 (1999). 10.1134/1.1187807
    • (1999) Semiconductors , vol.33 , pp. 939
    • Grimeiss, H.G.1
  • 14
    • 36149009491 scopus 로고
    • 10.1103/PhysRev.121.1001
    • G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961); 10.1103/PhysRev.121.1001
    • (1961) Phys. Rev. , vol.121 , pp. 1001
    • Watkins, G.D.1    Corbett, J.W.2
  • 25
    • 0035670268 scopus 로고    scopus 로고
    • 10.1016/S0921-4526(01)00771-2
    • I. Yonenaga, M. Nonaka, and N. Fukata, Physica B 308-310, 539 (2001); 10.1016/S0921-4526(01)00771-2
    • (2001) Physica B , vol.308-310 , pp. 539
    • Yonenaga, I.1    Nonaka, M.2    Fukata, N.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.