Isochronal annealing studies of the oxygen-vacancy centres in neutron-irradiated Si

Physica Status Solidi (A) Applied Research

Volumn 163, Issue 2, 1997, Pages 325-335

  Londos, C A ^a   Sarlis, N V ^a   Fytros, L G ^a  

^a UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; INFRARED SPECTROSCOPY; NEUTRON IRRADIATION; REACTION KINETICS; VANADIUM COMPOUNDS;

ISOCHRONAL ANNEALING;

SEMICONDUCTING SILICON;

EID: 0031245743     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199710)163:2<325::AID-PSSA325>3.0.CO;2-1     Document Type: Article

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