Quantitative analysis of complexes in electron irradiated CZ silicon

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 477-482

  Inoue, N ^a   Ohyama, H ^b   Goto, Y ^c   Sugiyama, T ^d  

^a Osaka Prefecture University   (Japan)

^b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c TOYOTA MOTOR CORPORATION   (Japan)

^d Rd Management Section   (Japan)

Author keywords

CZ silicon; Electron irradiation; Experiment; Group IV and compounds; Infrared absorption

Indexed keywords

CATHODOLUMINESCENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; HELIUM; INFRARED ABSORPTION;

CARBON CONCENTRATION; COMPLEX CONFIGURATION;

SILICON COMPOUNDS;

EID: 36049024088     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.003     Document Type: Article

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