Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Journal of Applied Physics

Volumn 90, Issue 3, 2001, Pages 1170-1178

  Khan, Aurangzeb ^a   Yamaguchi, Masafumi ^a   Ohshita, Y ^a   Dharmarasu, N ^a   Araki, K ^a   Abe, Takao ^b   Itoh, Hisayoshi ^c   Ohshima, T ^c   Imaizumi, M ^d   Matsuda, S ^d  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

^d JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035424218     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1384855     Document Type: Article

References (33)

1. M. Yamaguchi, A. Khan, S. J. Taylor, M. Imaizumi, T. Hisamatsu, and S. Matsuda, IEEE Trans. Electron Devices 46, 2133 (1999).
2. M. Yamaguchi, A. Khan, S. J. Taylor, K. Ando, T. Yamaguchi, S. Matsuda, and T. Aburaya, J. Appl. Phys. 86, 217 (1999).
3. A. Khan, M. Yamaguchi, T. Hisamatsu, and S. Matsuda, J. Appl. Phys. 87, 2162 (2000).
4. S. W. Glunz, S. Rein, W. Warta, J. Knobloch, and W. Wettling, Proceedings of the 11th International Photovoltaic Science and Engineering Conference (Tech. Digest, PVSEC-11, 1999), p. 549.
5. H. M. DeAngelis and P. J. Drevinsky, Appl. Phys. Lett. 42, 613 (1983).
6. A. O. Evwaraye, Inst. Phys. Conf. Ser. 46, 267 (1979).
7. J. A. Scott-Monck and B. E. Anspaugh, NASA Conf. Publ. 2097, 173 (1979).
8. W. P. Rahilly, J. Scott-Monck, B. E. Anspaugh, and D. Locker, Proceedings of the 12th Photovoltaic Specialists Conference (IEEE, New York. 1976), p. 276.
9. A. Suzuki, Sol. Energy Mater. Sol. Cells 50, 289 (1998).
10. A. Khan, M. Yamaguchi, M. Kaneiwa, T. Saga, T. Abe, O. Annzawa, and S. Matsuda, J. Appl. Phys. 87, 8389 (2000).
11. J. M. Trombetta and G. D. Watkins, Appl. Phys. Lett. 51, 1103 (1987).
12. P. M. Mooney, L. J. Cheng, M. Sull, J. D. Gerson, and J. W. Corbett, Phys. Rev. B 15, 3836 (1977).
13. i complex.
14. G. D. Watkins, Phys. Rev. B 12, 5824 (1975).
15. R. A. Woolley, E. C. Lightowlers, A. K. Tipping, M. C. Claybourn, and R. C. Newman, Mater. Sci. Forum 10, 934 (1986).
16. K. P. O'Donnell, K. M. Lee, and G. D. Watkin, Physica B 116, 258 (1983).
17. G. D. Watkins, in Radiation Damage in Semiconductors, edited by P. Baruch (Dynod, Paris, 1965), p. 97.
18. G. Davis and R. C. Newman, in Handbook of Semiconductors, edited by T. S. Moss and S. Mahajan (Elsevier, Amsterdam, 1994), p. 1557.
19. A. K. Ramdas and H. Y. Fan, J. Phys. Soc. Jpn. 18, 33 (1963).
20. L. J. Cheng and P. Vadja, J. Appl. Phys. 40, 4679 (1969).
21. R. C. Newman and A. R. Bean, Radiat. Eff. 8, 189 (1971).
22. N. Almelh and B. Goldstein, Phys. Rev. 149, 687 (1966).
23. L. W. Song, X. D. Zham, B. W. Benson, and G. D. Watkins, Phys. Rev. B 42, 5765 (1990).
24. L. C. Kimerling, in International Conference on Radiation Effects in Semiconductors, edited by N. B. Urli and J. W. Corbett (IOP, Bristol, 1997), p. 221.
25. L. C. Kimerling, P. Blood, and W. H. Gibson, Inst. Phys. Conf. Ser. 46, 56 (1979).
26. C. A. Landos, Semicond. Sci. Technol. 5, 645 (1990).
27. L. C. Kimerling, IEEE Trans. Nucl. Sci. 23, 1497 (1976).
28. J. W. Walker and C. T. Shah, Phys. Rev. B 7, 4587 (1973).
29. Y. H. Lee, L. J. Cheng, J. D. Gerson, P. M. Moony, and J. W. Corbett, Solid State Commun. 21, 109 (1977).
30. G. D. Watkins and J. W. Corbett, Phys. Rev. B 121, 1001 (1961).
31. Y. H. Lee, K. L. Wang, A. Jaworowski, P. M. Moony, and J. W. Corbett, Phys. Status Solidi A 57, 697 (1980).
32. L. C. Kimerling, M. T. Asom, J. L. Benton, P. J. Drevinsky, and C. E. Caefer, Mater. Sci. Forum 38, 141 (1979).
33. K. Graff and H. Pieper, J. Electrochem. Soc. 128, 660 (1981).