Erratum: Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si (Journal of Applied Physics (2013) 113 (113506)

Journal of Applied Physics

Volumn 113, Issue 23, 2013, Pages

  Sgourou, E N ^a   Timerkaeva, D ^b,c   Londos, C A ^a   Aliprantis, D ^a   Chroneos, A ^d,e   Caliste, D ^b   Pochet, P ^b  

^a UNIVERSITY OF ATHENS   (Greece)

^b UNIV GRENOBLE ALPES   (France)

^c KAZAN FEDERAL UNIVERSITY   (Russian Federation)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

^e OPEN UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84880772105     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811367     Document Type: Erratum

References (2)

1. E. N. Sgourou, D. Timerkaeva, C. A. Londos, D. Aliprantis, A. Chroneos, D. Caliste, and P. Pochet, J. Appl. Phys. 113, 113506 (2013). 10.1063/1.4795510
2. F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, Phys. Rev. B 84, 064126 (2011). 10.1103/PhysRevB.84. 064126