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Volumn 15, Issue 6, 2012, Pages 675-690

Point defect diffusion in Si and SiGe revisited through atomistic simulations

Author keywords

DFT calculations; Monte Carlo simulations; Point defect diffusion; Silicon; Strain effects

Indexed keywords

AB INITIO CALCULATIONS; ATOMISTIC CALCULATIONS; ATOMISTIC SIMULATIONS; CZOCHRALSKI SILICON; DEFECT DIFFUSION; DEFECT ENGINEERING; DFT CALCULATION; EXPERIMENTAL DETERMINATION; GE DIFFUSION; MIGRATION ENERGY; MONTE CARLO SIMULATION; PURE SILICON; STRAIN EFFECT; TEMPERATURE RANGE; VACANCY CONCENTRATION; VACANCY DIFFUSION; VACANCY MIGRATION; VACANCY-OXYGEN COMPLEXES;

EID: 84870056185     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.05.011     Document Type: Review
Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.