Radiation-induced deep levels in lead and tin doped N-type Czochralski silicon

Proceedings - Electrochemical Society

Volumn 5, Issue , 2004, Pages 395-406

  David, M L ^a   Simoen, E ^a   Claeys, C ^a,b   Neimash, V ^c   Kras'ko, M ^c   Kraitchinskii, A ^c   Voytovych, V ^c   Tishchenko, V ^c   Barbot, J F ^d  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INSTITUTE OF PHYSICS   (Ukraine)

^d UMR6630   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRON TRAPS; EVAPORATION; LEAD; RADIATION; RADIATION HARDENING; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TIN;

BAND GAP; DIVACANCIES; ELECTRICAL RECOMBINATION PROPERTIES; FLOAT ZONE (FZ);

SEMICONDUCTING SILICON;

EID: 17144369527     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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