Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Applied Physics Letters

Volumn 79, Issue 9, 2001, Pages 1273-1275

  Venezia, V C ^a,c   Pelaz, L ^a,d   Gossmann, H J L ^a   Haynes, T E ^b   Rafferty, C S ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039567321     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1385192     Document Type: Article

References (17)

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