Vacancy-assisted diffusion in silicon: A three-temperature-regime model

Physical Review Letters

Volumn 97, Issue 13, 2006, Pages

  Caliste, Damien ^a   Pochet, Pascal ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); DIFFUSION; KINETIC THEORY; MONTE CARLO METHODS;

DIVACANCY DISSOCIATION; TEMPERATURE REGIME MODEL; VACANCY ASSISTED DIFFUSION; VACANCY CONCENTRATION;

SILICON;

EID: 33749165297     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.97.135901     Document Type: Article

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