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Volumn 83, Issue 12, 1998, Pages 8062-8064

Out-diffusion of Zn from Si: A method to study vacancy properties in Si

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0039975975     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367900     Document Type: Article
Times cited : (15)

References (12)
  • 4
    • 0343712668 scopus 로고
    • edited by H. R. Huff, W. Bergholz, and K. Sumino The Electrochemical Society, Pennington, NJ
    • H. Bracht, N. A. Stolwijk, and H. Mehrer, in Semiconductor Silicon 1994, edited by H. R. Huff, W. Bergholz, and K. Sumino (The Electrochemical Society, Pennington, NJ, 1994), Vol. 94-10, p. 593.
    • (1994) Semiconductor Silicon 1994 , vol.94 , Issue.10 , pp. 593
    • Bracht, H.1    Stolwijk, N.A.2    Mehrer, H.3
  • 9
    • 85034282531 scopus 로고    scopus 로고
    • note
    • It is assumed that the concentration of vacancies is in thermal equilibrium at the beginning of the out-diffusion process.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.