Activation volume for antimony diffusion in silicon and implications for strained films

Applied Physics Letters

Volumn 75, Issue 7, 1999, Pages 941-943

  Zhao, Yuechao ^a   Aziz, Michael J ^a   Gossmann, Hans J ^b   Mitha, Salman ^c   Schiferl, David ^d  

^a HARVARD UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c CHARLES EVANS AND ASSOCIATES   (United States)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001606242     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124561     Document Type: Article

References (25)

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