A neutron reflectometry study on silicon self-diffusion at 900°C

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 11, 2012, Pages 2108-2112

  Huger E ^a   Kube, R ^b   Bracht, H ^b   Stahn, J ^c   Geue, T ^c   Schmidt, H ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

Neutron reflectometry; Self diffusion; Silicon

Indexed keywords

ISOTOPES; MONOCRYSTALLINE SILICON; NEUTRON REFLECTION; REFLECTION; REFLECTOMETERS; SEMICONDUCTOR MATERIALS; SILICON;

ANALYTICAL EXPRESSIONS; ANNEALING TIME; LITERATURE DATA; NEUTRON REFLECTOMETRY; ROUGHNESS PARAMETERS; SELF-DIFFUSION; SELF-DIFFUSIVITY; SINGLE CRYSTALLINE SILICON;

DIFFUSION;

EID: 84868702067     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201248330     Document Type: Article

References (30)

1. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B 52, 16542 (1995).
2. H. Bracht, E. E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81, 393 (1998).
3. H. Bracht, H. H. Silvestri, I. D. Sharp, and E. E. Haller, Phys. Rev. B 75, 035211 (2007).
4. Y. Shimizu, M. Uematsu, and K. M. Itoh, Phys. Rev. Lett. 98, 095901 (2007).
5. R. F. Peart, Phys. Status Solidi 15, K119 (1966).
6. J. M. Fairfield and B. J. Masters, J. Appl. Phys. 38, 3148 (1967).
7. A. Seeger and K. P. Chik, Phys. Status Solidi 29, 455 (1968).
8. J. Hirvonen and A. Anttila, Appl. Phys. Lett. 35, 703 (1979).
9. F. J. Demond, S. Kalbitzer, H. Mannesperger, and H. Damjantschitsch, Phys. Lett. 93A, 503 (1982).
10. L. Kalinowski and R. Seguin, Appl. Phys. Lett. 35, 211 (1979).
11. A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999).
12. Y. Nakabayashi, H. I. Osman, K. Toyonaga, K. Yokota, S. Matsumoto, J. Murotal, K. Wada, and T. Abe, Jpn. J. Appl. Phys. 42, 3304 (2003).
13. A. Ural, P. B. Griffin, and J. D. Plummer, Phys. Rev. Lett. 83, 3454 (1999).
14. M. I. J. Probert and M. C. Payne, Phys. Rev. B 67, 075204 (2003).
15. M. J. Puska, S. Pöykkö, M. Pesola, and R. M. Nieminen, Phys. Rev. B 58, 1318 (1998).
16. F. El-Mellouhi, N. Mousseau, and P. Ordejón, Phys. Rev. B 70, 205202 (2004).
17. A. Nylandsted Larsen and P. Kringhøj, Appl. Phys. Lett. 68, 2684 (1996).
18. H. Bracht and A. Chroneos, J. Appl. Phys. 104, 076108 (2008).
19. H. Schmidt, M. Gupta, J. Stahn, T. Gutberlet, and M. Bruns, Acta Mater. 56, 464 (2008).
20. E. Hüger, U. Tietze, D. Lott, H. Bracht, E. E. Haller, D. Bougeard, and H. Schmidt, Appl. Phys. Lett. 93, 162104 (2008).
21. H. Schmidt, S. Chakravarty, M. Jiang, E. Hüger, P. K. Parida, T. Geue, J. Stahn, U. Tietze, and D. Lott, J. Mater. Sci. 47, 4087 (2012).
22. E. Hüger, H. Schmidt, J. Stahn, B. Braunschweig, U. Geckle, and M. Bruns, Phys. Rev. B 80, R220101 (2009).
23. H. Schmidt, M. Gupta, and M. Bruns, Phys. Rev. Lett. 96, 055901 (2006).
24. S. Chakravarty, E. Hüger, H. Schmidt, J. Stahn, M. Horisberger, and N. P. Lalla, Scr. Mater. 61, 1117 (2009).
25. M. Gupta, A. Gupta, S. Chakravarty, R. Gupta, and T. Gutberlet, Phys. Rev. B 74, 104203 (2006).
26. M. Rennhofer, B. Sepiol, M. Sladecek, D. Kmiec, S. Stankov, G. Vogl, M. Kozlowski, R. Kozubski, A. Vantomme, J. Meersschaut, R. Rüffer, and A. Gupta, Phys. Rev. B 74, 104301 (2006).
27. J. W. Ager, III, J. W. Beeman, W. L. Hansen, E. E. Haller, I. D. Sharp, C. Y. Liao, A. Yang, M. L. W. Thewalt, and H. Riemann, J. Electrochem. Soc. 152, G448 (2005).
28. L. G. Parratt, Phys. Rev. 54, 359 (1954).
29. A. C. Ferrari, S. E. Rodil, and J. Robertson, Phys. Rev. B 67, 155306 (2003).
30. T. S. Chao, C. L. Lee, and T. F. Lei, J. Electrochem. Soc. 138, 1756 (1991).