Binding energy of vacancies to clusters formed in Si by high-energy ion implantation

Applied Physics Letters

Volumn 79, Issue 13, 2001, Pages 1983-1985

  Kalyanaraman, R ^a,b   Haynes, T E ^a   Holland, O W ^a   Gossmann, H J L ^b   Rafferty, C S ^b   Gilmer, G H ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035943936     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1405814     Document Type: Article

References (19)

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