Type and charge states of point defects in heavily As- and B-doped silicon

Materials Science in Semiconductor Processing

Volumn 6, Issue 1-3, 2003, Pages 15-19

  Nakabayashi, Y ^a   Osman, H I ^a   Yokota, K ^a   Toyonaga, K ^a   Matsumoto, S ^a   Murota, J ^b   Wada, K ^c   Abe, T ^d  

^a KEIO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Massachusetts Institute of Technology Cambridge   (United States)

^d SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Point defects; Self diffusion; Silicon

Indexed keywords

ARSENIC; FERMI LEVEL; HETEROJUNCTIONS; POINT DEFECTS; SEMICONDUCTOR DOPING;

SELF-DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0142167875     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(03)00066-0     Document Type: Article

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