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Volumn 81, Issue 5, 1997, Pages 2173-2178

Isoconcentration studies of antimony diffusion in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000503654     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364286     Document Type: Article
Times cited : (15)

References (17)
  • 8
    • 0003667588 scopus 로고
    • Technology Modelling Associates, Palo Alto, CA
    • TSUPREM-4 User's Manual (Technology Modelling Associates, Palo Alto, CA, 1995).
    • (1995) TSUPREM-4 User's Manual
  • 11
    • 0003597024 scopus 로고
    • Properties of Silicon, INSPEC, The Institute of Electrical Engineers, London
    • D. Nobili, in Properties of Silicon, EMIS Data Review N4 (INSPEC, The Institute of Electrical Engineers, London, 1988), p. 401.
    • (1988) EMIS Data Review N4 , pp. 401
    • Nobili, D.1
  • 12
    • 84933643121 scopus 로고
    • We have used the solid solubility values by Nobili (see Ref. 11) through-out this study which we believe are the most accurate values; calculations by SUPREM (see Ref. 8), which we are comparing to, are done with the Trumbore values [F. A. Trumbore, Bell Syst. Tech. J. 39, 205 (1960)].
    • (1960) Bell Syst. Tech. J. , vol.39 , pp. 205
    • Trumbore, F.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.